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dc.contributor.authorSimiyu, J
dc.contributor.authorMusembi, R.J
dc.contributor.authorMwabora, M
dc.contributor.authorKanmja, P.K
dc.contributor.authorNjoroge, V
dc.contributor.authorWangati, CX
dc.date.accessioned2014-04-28T07:01:29Z
dc.date.available2014-04-28T07:01:29Z
dc.date.issued2012
dc.identifier.citationDeposition and Characterization of CuAlxB]_x Se2 Thin Film Deposited by DC-RF Co-sputtering for PhotovoItaic Application c.x. Wangati1, \V. Njoroge2, P.K. Kanmja\ J.M. Mwabora", R.J. Musern bi", J. Simiyu ' 'Deparunent of Technical and Applied Sciences, Technical University of Kenya, P.O. Box 52~28-00200, Nairobi, Kenya. cOepanment of Physics, Kenyarta University, P.O. Box 43844 GPO Nairobi- Kenya ;Depal1ment of Physics, Jomo Kenyatta University of Agriculture and Technology, P.O. Box 6200()00200 'Depanment of Physics, University of Nairobi. PO. Box 30197- 00100 GPO Nairobi-Ken_US
dc.identifier.urihttp://hdl.handle.net/11295/66056
dc.description.abstractSolar cell has the potential of being the m am drive to economic prosperity as it is one of the mo-t promising sources of cheap, environmentally friendly and renewable energy. Crystalline silicon based technology currently dominate the solar energy market. However, it is generally expensive and the lell efficiency has reached 24.7% hence approaching theoretical expected maximum of 30%. In CIrcler 1" reduce cost of production, focus is shifting towards thin film based I-Tll-VI family chalcopyrite compounds where cheaper Culn.Ga..Se- absorber semiconductor is reponed to have attained tile highest efficiency of 20.3 % This study intends to fabricate and characterize a compound of copper. aluminum, boron and selenium (CuAI,BI_, Se2) thin film. The compound is based on J-TlJ-I\!family of chalcopyrite which has generated a lot of interest as an absorber material for solar cells due to their high absorption coefficients The research procedure will involve deposition of CuAI,BI.,Se2 thin film by DC and RF magnetron sputtering of CuA IB alloy and selenium targets respectively The deposition is done using Edwards Auto 360 RF and DC magnetron \3CULIIll system. Characterization of the resulting thin film based on structural and optoelectronic properties is done using X-Ray diffraction (XED), X-R;I> photoelectron spectroscopy CAPS), Scanning Electron microscopy (SEM), UV-Visible-JR Spectrometer. and the Hall Effect. The outcome of this research will provide fundamental practical science and engineering knowledge base on structural and optoelectronic properties ofCuAI.,B1., See c ornpouud os solar absorber material among other optoelectronic applications. In general the study will contribute towards achieving greater efficiency in production ofvgre en" energy.en_US
dc.titleDeposition and Characterization of CuAlxBx Se2 Thin Film Deposited by DC-RF Co-sputtering for PhotovoItaic Applicationen_US


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