Optical and electrical properties of Pd doped Sn02 thin films deposited by spray pyrolysis
| dc.contributor.author | Odari, B. V | |
| dc.contributor.author | Mageto, M | |
| dc.contributor.author | Musembi, R | |
| dc.contributor.author | Othieno, H | |
| dc.contributor.author | Gaitho, F | |
| dc.contributor.author | Murarnb a, V. | |
| dc.date.accessioned | 2014-04-28T12:58:18Z | |
| dc.date.available | 2014-04-28T12:58:18Z | |
| dc.date.issued | 2013 | |
| dc.identifier.citation | 1st Young Scientists' MSSEESA Conference on Materials Science and Solar Cell Technology | en_US |
| dc.identifier.uri | http://hdl.handle.net/11295/66106 | |
| dc.description.abstract | Thin films of Sn02: Pd have been deposited on glass substrate at 450°C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H20) and Palladium Chloride (PdCl2). The influence of increasing Pd concentration on the electrical and optical properties has been investigated. The minimum resistivity of 5.14 x lO-2.\2cm for 3.68at% Pd film was obtained. The optical properties were studied in the UV/v1SlNJR region. The optical band gap for undoped SnO: films lies at 3.93 eV and Palladium doped films lay in the range 3.86 - 3.99 eV. Using dispersion analysis with Drude and Kim terms, optical constants were determined from spectro-photometric measurements for f 1III S on glass. The film 111ickness was determined through analysis using the SCOUT software to be in the range J 40 - 223 nm | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | University of Nairobi | en_US |
| dc.title | Optical and electrical properties of Pd doped Sn02 thin films deposited by spray pyrolysis | en_US |
| dc.type | Article | en_US |
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