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dc.contributor.authorSingh, S R
dc.contributor.authorSingh, S
dc.date.accessioned2014-05-08T07:46:55Z
dc.date.available2014-05-08T07:46:55Z
dc.date.issued15-09-83
dc.identifier.citationSingh, SR., Singh, S (1983). Cooperation of free- and bound-electron-phonon scatterings in Sb-doped Ge. Phys. Rev B, 28(6), 3386en_US
dc.identifier.urihttp://journals.aps.org/prb/pdf/10.1103/PhysRevB.28.3386
dc.identifier.urihttp://hdl.handle.net/11295/66300
dc.description.abstractThe cooperation of free- and bound-electron — phonon scatterings are studied in detail for Sb-doped Ge in the intermediate range of donor concentrations. It has been shown that the cooperation of free- and bound-electron — phonon scatterings in the intermediate range of donor concentrations explains the anomalous variation of the phonon-conductivity ratio K D/ K P doped to pure host) with temperature for Sb-doped germanium which could not be explained so far by previous workersen_US
dc.language.isoenen_US
dc.publisherUniversity of Nairobien_US
dc.titleCooperation of free- and bound-electron-phonon scatterings in Sb-doped Ge.en_US
dc.typeArticleen_US


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