Role of Cl on diffusion of cu in in2s3 layers prepared by ion layer gas reaction method
dc.contributor.author | Wafula, Henry | |
dc.contributor.author | Musembi, Robinson | |
dc.contributor.author | Juma, Albert | |
dc.contributor.author | Manasse, Kitui | |
dc.contributor.author | Araoz, Rodrigo | |
dc.date.accessioned | 2015-06-09T06:05:57Z | |
dc.date.available | 2015-06-09T06:05:57Z | |
dc.date.issued | 2015 | |
dc.identifier.uri | http://hdl.handle.net/11295/84416 | |
dc.identifier.uri | https://doaj.org/article/63e1ac2434dd4635bbb4845a71c17aaf | |
dc.description.abstract | Ion layer gas reaction (ILGAR) method allows for deposition of Cl-containing and Cl-free In2S3 layers from InCl3 and In(OCCH3CHOCCH3)3 precursor salts, respectively. A comparative study was performed to investigate the role of Cl on the diffusion of Cu from CuSCN source layer into ILGAR deposited In2S3 layers. The Cl concentration was varied between 7 and 14 at.% by varying deposition parameters. The activation energies and exponential pre-factors for Cu diffusion in Cl-containing samples were between 0.70 to 0.78 eV and between 6.0 × 10−6 and 3.2 × 10−5 cm2/s. The activation energy in Cl-free ILGAR In2S3 layers was about three times less compared to the Cl-containing In2S3, and the pre-exponential constant six orders of magnitude lower. These values were comparable to those obtained from thermally evaporated In2S3 layers. The residual Cl-occupies S sites in the In2S3 structure leading to non-stoichiometry and hence different diffusion mechanism for Cu compared to stoichiometric Cl-free layers. | en_US |
dc.language.iso | en | en_US |
dc.publisher | University of Nairobi | en_US |
dc.title | Role of Cl on diffusion of cu in in2s3 layers prepared by ion layer gas reaction method | en_US |
dc.type | Article | en_US |
dc.type.material | en | en_US |
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