Phase Transitions of Antiferroelectric Lead Zirconate Thin Films in High Electric Fields
wa Gachigi, K.
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Phase transitions in antiferroelectric lead zirconate thin films were studied at room temperature and at 77 K. The lead zirconate films were prepared on Pt coated Si substrates by a reactive magnetron co-sputtering mthod followed by a rapid thermal annealing process at 700 °C. An electric field induced antiferroelectric — ferroelectric phase transition was observed at room temperature with a maximum polarization value of 70 μC/cm2. The average field required to induce the ferroelectric state and that for the reversion to the antiferroelectric state were 294 kV/cm and 179 kV/cm respectively. At 77 K a metastable ferroelectric — ferroelectric transition was observed with a maximum polarization of 58 μC/cm2. These transitions were found to be coincident with those of lead zirconate single crystals.