Light Soaking Induced Increase in Conversion Efficiency in Solar Cells Based on In(OH)xSy/Pb(OH)xSy
Aduda, B O
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Light soaking characterization on complete SnO2:F/TiO2/ln(OH)xSy/PEDOT:PSS/Au, Pb(OH)xS)pEDOT:PSS/Au, eta solar cell structure as well as on devices which do not include one or both TiO2 and/or PEDOT:PSS layers has been conducted. Additionally, studies of SnO2:F/In(OH)xSy/PEDOT:PSS/Au solar cell have been performed. The power conversion efficiency and the short circuit current density have been found to increase with light soaking duration by a factor of about 1.6 - 2.7 and 2.1 - 3, respectively. The increase in these two parameters has been attributed to the filling up of trap states and/or charge-discharge of deep levels found in In(OH)xSy. These effects take place at almost fill factor and open circuit voltage being unaffected by the light soaking effects.