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Chapter 436 – Absorber Thickness Dependence on CuInSe2 Based Solar Cells Performance Using CuIn Precursors Selenized Using H2Se Gas
(University of Nairobi, 2000-07)
The performance of CulnSe2 based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H2Se gas at reaction temperature of 350°C ...