Performance of TiO2/In(OH)iSj/Pb(OH)xSy Composite ETA Solar Cell Fabricated from Nitrogen Doped TiO2 Thin Film Window Layer
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Date
2012Author
Ayieko, C O
Musembi, R J
Waita, S M
Aduda, B O
Jain, P K
Type
ArticleLanguage
enMetadata
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In this work, Titanium Dioxide (TiO2) thin films were prepared by spray pyrolysis and thermally annealed at
400 oC. The films were characterized as deposited (no annealing) as well as after annealing. Optical studies showed that the
energy band gap of the films was lowered from 3.25 eV to 2.90 eV on Nitrogen (N2) doping. The reduction in energy band
gap was attributed to the introduction of N2 impurity states on the bands (conduction band and or valence band). The effect of
N2 doping of Titanium Dioxide window layer on the efficiency of the ETA TiO2/In(OH)iSj/Pb(OH)xSy solar cell was
investigated using a conventional current-voltage (I-V) technique. The photovoltaic conversion efficiency (η) increased from
1.06% for the solar cell with undoped films to 1.32% for the solar cell with N2-doped films. The increase in photovoltaic
conversion efficiency on doping was attributed to increased light absorption due to the Nitrogen doping.
Publisher
School of Physical Sciences