ZnO:Sn deposition by reactive evaporation: effects of doping on the electrical and optical properties

Abstract

Tin doped zinc oxide thin films have been deposited by reactive evaporation, the deposition has been done at various doping levels ranging from 1% to 8%. The optical properties have been characterized using UV-VIS-NIR spectrophotometer, the data for transmittance has been used for further analysis using scout. The transmittance of doped thin films has been found to be > 75% while for those of as prepared samples has been found to be even higher. The bandgap calculations have shown that the band gap for as prepared and doped thin films ranges between 2.95 – 3.95 eV. The electrical characterization has been done mainly at room temperature using a well calibrated four point probe. The sheet resistivity has been found to range from 24.3-26.7 Ohm cm. The coating have been found to be suitable for antireflectance as well as transparent contacting oxide applications.