Phase Transitions of Antiferroelectric Lead Zirconate Thin Films in High Electric Fields
dc.contributor.author | Yamakawa, K. | |
dc.contributor.author | wa Gachigi, K. | |
dc.contributor.author | Troiler-McKinstry, S. | |
dc.contributor.author | Dougherty, J.P. | |
dc.date.accessioned | 2013-04-16T09:27:51Z | |
dc.date.available | 2013-04-16T09:27:51Z | |
dc.date.issued | 1996 | |
dc.identifier.citation | Ferroelectrics Letters Section Volume 20, Issue 5-6, 1996 | en |
dc.identifier.uri | http://erepository.uonbi.ac.ke:8080/xmlui/handle/123456789/16110 | |
dc.description.abstract | Phase transitions in antiferroelectric lead zirconate thin films were studied at room temperature and at 77 K. The lead zirconate films were prepared on Pt coated Si substrates by a reactive magnetron co-sputtering mthod followed by a rapid thermal annealing process at 700 °C. An electric field induced antiferroelectric — ferroelectric phase transition was observed at room temperature with a maximum polarization value of 70 μC/cm2. The average field required to induce the ferroelectric state and that for the reversion to the antiferroelectric state were 294 kV/cm and 179 kV/cm respectively. At 77 K a metastable ferroelectric — ferroelectric transition was observed with a maximum polarization of 58 μC/cm2. These transitions were found to be coincident with those of lead zirconate single crystals. | en |
dc.language.iso | en | en |
dc.title | Phase Transitions of Antiferroelectric Lead Zirconate Thin Films in High Electric Fields | en |
dc.type | Article | en |
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