| dc.description.abstract | Chemical vapour deposition has been used
transparent conducting tin oxide thin films.
useful for solar energy applications.
to deposit
The films are
electrical properties have been investigated.
Optical and
Direct and
indirect bandgap values of tin oxide films have been found
to be 3.55 and 3.19 eV respectively. Transmission in
the visible region of the spectrum was about 85%.
Preparation of Fluorine doped tin oxide films is also
presented. The sheet resistance obtained is 50n per
square. An attempt was made to fabricate Sn02:F/Si02/p-Si
solar cell which yielded an open circuit voltage of 0.25 V,
short circuit current density of 556~A/cm2, fill factor of
2 0.23 and efficiency of 0.04% under 80mW/cm insolation.
The low efficiency can be attributed to high series
resistance, mismatch of work function and possibly thick
interfacial oxide layer. | en |
