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dc.contributor.authorKalaiya, Nitin V
dc.date.accessioned2013-05-11T12:58:54Z
dc.date.available2013-05-11T12:58:54Z
dc.date.issued1990
dc.identifier.citationMaster of Scienceen
dc.identifier.urihttp://erepository.uonbi.ac.ke:8080/xmlui/handle/123456789/22155
dc.description.abstractSemiconductor Insulator Semiconductor (SIS) Photovoltaic Converters have been fabricated successfully by the spray pyrolysis and the Vacuum deposition techniques. The two techniques and fabrication processes have been discussed. Preparatotion of Fluorine doped Tin Oxide films is also presented. Sn02:F thin films with a sheet resistivity of 75n/owere deposited on too si=cm P type (111) boron doped silicon wafer by spray pyrolysis and necessary contacts app7ied yie7ding an open circuit vo7tage of 110mV, short circuit current density of 45fA/C~, fill factor of 0.25 and efficiency of 0.002% under 80mw/cm2 insolation. Indium Tin Oxide thin films were deposited on similar silicon wafers using the vacuum coating unit and best va7ues obtained for the cells were, open circuit vo t tese, 340mV, short circuit current dens i ty , 4.9mA/cm2, fill factor, 0.404 and cell efficiency 0.85%. Optical measurements of the films have been done and it has been found that the films are transparent and conducting. The low efficiency can be attributed to high series resistance and possibly thick interfacial oxide layer.en
dc.language.isoenen
dc.publisherUniversity of Nairobien
dc.titleFabrication of a semiconductor insulator photovoltaic converter semiconductoren
dc.typeThesisen
local.publisherFaculty of Science. University of Nairobien


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