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dc.contributor.authorMuiva, Cosmas M
dc.contributor.authorSathiaraj, S T
dc.contributor.authorMwabora, Julius M
dc.date.accessioned2013-06-13T12:24:04Z
dc.date.issued2011
dc.identifier.citationJOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Vol. 13, No. 9, September 2011, p. 1240 - 1245en
dc.identifier.urihttp://erepository.uonbi.ac.ke:8080/xmlui/handle/123456789/33076
dc.description.abstractPolycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the films increased with switch from chalcogen rich to chalcogen deficient films.en
dc.language.isoenen
dc.subjectIn2Se3en
dc.subjectSpray pyrolysisen
dc.subjectChalcopyrite buffersen
dc.subjectOpto-electronic propertiesen
dc.subjectEnergy gapen
dc.titleThermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film propertiesen
dc.typeArticleen
local.publisherDepartment of Physics, University of Botswana,en
local.publisherDepartment of Physics, University of Nairobien
local.publisherAfrican Materials Science and Engineering Network (AMSEN), a Carnegie IAS-RISE Networken


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