dc.contributor.author | Muiva, Cosmas M | |
dc.contributor.author | Sathiaraj, S T | |
dc.contributor.author | Mwabora, Julius M | |
dc.date.accessioned | 2013-06-13T12:24:04Z | |
dc.date.issued | 2011 | |
dc.identifier.citation | JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS Vol. 13, No. 9, September 2011, p. 1240 - 1245 | en |
dc.identifier.uri | http://erepository.uonbi.ac.ke:8080/xmlui/handle/123456789/33076 | |
dc.description.abstract | Polycrystalline In2Se3 semiconducting thin films were synthesized by chemical spray pyrolysis and their properties
investigated. Strong dependence of structural and opto-electronic properties on film composition was observed. Absorption
coefficient (α) at normal incidence was determined and an optimised direct optical band gap (Eg) of 1.92 eV was obtained at
a substrate temperature (Tsub) of 673 K. Whereas low Tsub favoured incorporation of impurities in the films, elevated Tsub
had the effects of introducing textural and structural defects with modifications in the film properties. The crystallinity of the
films increased with switch from chalcogen rich to chalcogen deficient films. | en |
dc.language.iso | en | en |
dc.subject | In2Se3 | en |
dc.subject | Spray pyrolysis | en |
dc.subject | Chalcopyrite buffers | en |
dc.subject | Opto-electronic properties | en |
dc.subject | Energy gap | en |
dc.title | Thermal and compositional defects in chemical spray pyrolysed indium selenide (In2Se3) thin films: Effects on film properties | en |
dc.type | Article | en |
local.publisher | Department of Physics, University of Botswana, | en |
local.publisher | Department of Physics, University of Nairobi | en |
local.publisher | African Materials Science and Engineering Network (AMSEN), a Carnegie IAS-RISE Network | en |