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dc.contributor.authorAlfred, A
dc.contributor.authorMwabora, JM
dc.contributor.authorMusembi, RJ
dc.contributor.authorWaita, SM
dc.date.accessioned2014-04-28T06:15:29Z
dc.date.available2014-04-28T06:15:29Z
dc.date.issued2014-04-28
dc.identifier.urihttp://hdl.handle.net/11295/66036
dc.description.abstractThe effects of oxygen partial pressure and substrate temperature 011 optical properties of CuCr02 thin films deposited on float glass substrate by reactive DC magnetron sputtering system using CuCr allov targets have been studied. The sputtering was performed in Argall (Ar) and 0:\) gen (02) atmosphere and the su bstrate tern perature varied up to 263°C. The opt ic a I can stants: re fract ive index. 11, ext inet iOil coefficient, k, dielectric constant, L and absorption coefficient, a, at different oxygen partial pressure and substrate temperatures were determined from measured transmittance and reflectance data fitted in SCOl;T software for wavelength range 200-2247 nm. The optical studies gave energy band gap of about :!.47 eV at 0.153 ubar Po? and 3.7 eV at 263 DC substrate temperature. The values obtained for Urbach energy were 0.27-0.3 I eV for samples prepared at POc between 0 153-0. 187 ubar and 0.8 I -1.45 eV for those prepared at substrate temperature of263 °C and as-grown film, respectivelv ,'.en_US
dc.language.isoenen_US
dc.titleEffects of Oxygen Partial Pressure and Substrate Temperature on Optical Properties of Sputter Deposited Cu Cr O, Thin Films.en_US
dc.typeArticleen_US


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