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Characterization of Indium doped Tin Selenide (In iSn.Sey) Thin Films for Phase Change Memory Application

dc.contributor.authorMutange, B K
dc.contributor.authorKarimi, P M
dc.contributor.authorMusembi, R J
dc.contributor.authorWamwangi, D M
dc.date.accessioned2014-04-28T11:17:23Z
dc.date.available2014-04-28T11:17:23Z
dc.date.issued2013
dc.identifier.citationCharacterization of Indium doped Tin Selenide (In iSn.Se.] Thin Films for Phase Change Mern o ry Application1st Young Scientists' MSSEESA Conference on Materials Science and Solar Cell Technologyen_US
dc.identifier.urihttp://hdl.handle.net/11295/66085
dc.language.isoenen_US
dc.publisherUniversity of Nairobien_US
dc.titleCharacterization of Indium doped Tin Selenide (In iSn.Sey) Thin Films for Phase Change Memory Applicationen_US
dc.typePresentationen_US


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