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Optoelectronic Properties of Palladium Doped Tin (IV) Oxide (Pd: Sn02) Tlfin Films Deposited by Spray Pyrolysis

dc.contributor.authorMwathe, P M
dc.contributor.authorMusembi, R J
dc.contributor.authorMunji, M M
dc.contributor.authorOdari, B V
dc.date.accessioned2014-04-28T11:31:03Z
dc.date.available2014-04-28T11:31:03Z
dc.date.issued29-11-13
dc.identifier.citationP.M. Mwathe, R.J. Musembi, M. M. Munji, B.V. Odari, Optoelectronic properties of Palladium doped Tin(IV) oxide (Pd:SnO2) thin films deposited by spray pyrolysis, Young Scientists’ MSSESA Conference on Material Science and Solar Cell Technology, United Kenya Club, Kenya, 28-29 November 2013.en_US
dc.identifier.urihttp://hdl.handle.net/11295/66086
dc.language.isoenen_US
dc.publisherUniversity of Nairobien_US
dc.titleOptoelectronic Properties of Palladium Doped Tin (IV) Oxide (Pd: Sn02) Tlfin Films Deposited by Spray Pyrolysisen_US
dc.typePresentationen_US


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