Chapter 436 – Absorber Thickness Dependence on CuInSe2 Based Solar Cells Performance Using CuIn Precursors Selenized Using H2Se Gas

Abstract

The performance of CulnSe2 based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H2Se gas at reaction temperature of 350°C is investigated. Progressive number of moles of CulnSe2 and InSe phases in the Selenized Culn precursors using a kinetic model as well as experimental number of moles calculated from XRD counts is also given. The study compliments efforts in development and operation of CulnSe2 based solar cell commercial scale process by providing fundamental information. The numbers of moles of CulnSe2 and InSe with reaction period were found to be consistent with device performance with respect to reaction period. Good devices of efficiency greater than 10% can be obtained using an absorber layer with a trace of InSe phase provided the InSe moles approaches zero. Although the time for the precursors to react fully is independent of thickness, there is a limit in solar cell efficiency that can be obtained for each precursor thickness.