| dc.contributor.author | Onyango, F N | |
| dc.date.accessioned | 2014-05-08T04:54:35Z | |
| dc.date.available | 2014-05-08T04:54:35Z | |
| dc.date.issued | 1976 | |
| dc.identifier.citation | Onyango, F. N. (1976). Electric-field-induced IR absorption in diamond. Journal of Physics C: Solid State Physics, 9(19), L533. | en_US |
| dc.identifier.uri | http://iopscience.iop.org/0022-3719/9/19/004 | |
| dc.identifier.uri | http://hdl.handle.net/11295/66295 | |
| dc.description.abstract | Electric-field-induced absorption of a type IIa diamond has been measured at various resolutions over a wider spectral range (2300 to 2700 cm-1) than hitherto. A new feature has been observed at 2335 cm-1 close to the Raman-active but otherwise infrared-inactive band at 2339 cm-1. Higher-resolution (5 cm-1) measurements in the neighbourhood of the k approximately=0 overtone resulted in a band being observed at exactly twice the Raman frequency, namely 2664 cm-1. This frequency is compared with a previous field-induced infrared result at 2660 cm-1 measured at a resolution of 28 cm-1 and a Raman scattering result at 2667 cm-1 measured at a resolution of 8 cm-1. The anisotropy of the overtone band is also found to agree with theoretical predictions. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | University of Nairobi | en_US |
| dc.title | Electric-Field-Induced IR Absorption in Diamond | en_US |
| dc.type | Article | en_US |
