Show simple item record

dc.contributor.authorMulama, Austine A
dc.contributor.authorMwabora, Julius M
dc.contributor.authorOduor, Andrew O
dc.contributor.authorMuiva, Cosmas C
dc.date.accessioned2014-07-16T09:00:54Z
dc.date.available2014-07-16T09:00:54Z
dc.date.issued2014
dc.identifier.citationMulama, A. A., Mwabora, J. M., Oduor, A. O., & MUIVA, C. C. (2014). Optical Properties and Raman Studies of Amorphous Se-Bi Thin Films. The African Review of Physics, 9.en_US
dc.identifier.urihttp://hdl.handle.net/11295/73109
dc.description.abstractFlash evaporated amorphous Se_____Bi_(x = 0, 1, 2, 3, and 4 at.%) thin films of 350 پ} 10__ thickness have been investigated in the wavelength range of 200nm − 3000nm. It is found that the effect of increasing bismuth content on the as deposited films led to increased absorption coefficient, reflectance, refractive index and extinction coefficient while transmittance and optical band gap energy decreased. The Raman spectra showed peaks at 238.8____ ,248.3____, 249.5____, 250.7____, 251.9____, 488.1____, and 489.3____ due to selenium rings and chains at various bismuth concentrations.en_US
dc.language.isoenen_US
dc.publisherUniversity of Nairobien_US
dc.titleOptical Properties and Raman Studies of Amorphous Se-Bi Thin Filmsen_US
dc.typeArticleen_US
dc.type.materialen_USen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record