Search
Now showing items 1-3 of 3
Improved performance of strained layer diode lasers by non-square quantum well growth
(University of Nairobi, 2000)
Envelope Function Approximation (EFA) Bandstructure Calculations for III-V Non-square Stepped Alloy Quantum Wells Incorporating Ultra-narrow (~5Å) Epitaxial Layers
(2000)
We describe Envelope Function Approximation (EFA) bandstructure calculations based on a 4-band electron (EL), heavy-hole (HH), light-hole (LH) and split-off hole (SO) effective mass Hamiltonian, with Burt-Foreman ...