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dc.contributor.authorMulamaa, Austine A
dc.contributor.authorMwabora, Julius M
dc.contributor.authorOduor, Andrew O
dc.contributor.authorMuiva, Cosmas M
dc.contributor.authorMuthoka, Boniface
dc.contributor.authorAmukayia, Betty N
dc.contributor.authorMbete, Drinold A
dc.date.accessioned2016-05-24T13:15:48Z
dc.date.available2016-05-24T13:15:48Z
dc.date.issued2015
dc.identifier.urihttp://hdl.handle.net/11295/95894
dc.description.abstractSelenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.en_US
dc.language.isoenen_US
dc.publisherUniversity of Nairobien_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.titleStability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Filmsen_US
dc.typeArticleen_US


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Attribution-NonCommercial-NoDerivs 3.0 United States
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States