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dc.contributor.authorMuiva, Cosmas M
dc.contributor.authorMaabong, Kelebogile
dc.contributor.authorSathiaraj, Stephen T
dc.contributor.authorMwabora, Julius M
dc.date.accessioned2016-05-24T15:06:59Z
dc.date.available2016-05-24T15:06:59Z
dc.date.issued2012
dc.identifier.urihttp://hdl.handle.net/11295/95903
dc.description.abstractAmorphous Se100-XInX thin films were prepared by flash evaporation of the pre-melt quenched bulk samples. The samples were characterised and the suitability of each composition assessed towards applications as a buffer layers in CuInSe2 photovoltaic cells. XRD studies confirmed that all the samples were amorphous. There was a descending dependence of complex dielectric constant and refractive index on wavelength which levelled in the infra-red (IR) region. A red shift in the optical energy gap Egopt from 1.76 eV for In = 5 at% to 1.46 eV for In = 20 at% was observed. The Egopt values were in the range that is compatible with solar energy conversion.en_US
dc.language.isoenen_US
dc.publisherUniversity of Nairobien_US
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 United States*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/us/*
dc.titleOptical Properties Of Flash Evaporated Amorphous Se100-xinx Thin Films For Cuinse2 Solar Cell Applicationsen_US
dc.typeArticleen_US


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Attribution-NonCommercial-NoDerivs 3.0 United States
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 United States