dc.contributor.author | Odari, Benjamin V | |
dc.contributor.author | Musembi, Robinson J | |
dc.contributor.author | Mageto, Maxwell J | |
dc.contributor.author | Othieno, Herick | |
dc.contributor.author | Gaitho, Francis | |
dc.contributor.author | Mwamburi, Mghendi | |
dc.contributor.author | Valentine, Muramba | |
dc.date.accessioned | 2021-08-16T12:58:07Z | |
dc.date.available | 2021-08-16T12:58:07Z | |
dc.date.issued | 2013 | |
dc.identifier.uri | http://article.sapub.org/10.5923.j.materials.20130304.05.html | |
dc.identifier.uri | http://erepository.uonbi.ac.ke/handle/11295/155231 | |
dc.description.abstract | F-co-doped Palladium Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 4500
C
using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H2O), Palladium Chloride (PdCl2) and
Ammonium Fluoride (NH4F). A resistivity of 0.3-6.9×10-2
Ωcm was obtained in F-co-doped PTO films prepared with a Pd
content of 3.68at% and F content of 0 – 23.96at% under optimized conditions. The optical properties were studied in the
UV/VIS/NIR region. The optical bandgap of the films laid in the range 3.945 – 4.014 eV. Using dispersion analysis with
Drude and Kim terms, optical constants were determined from spectro-photometric measurements for films on glass. | en_US |
dc.language.iso | en | en_US |
dc.publisher | University of Nairobi | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | Spray Pyrolysis, Tin Oxide, Codoping, Fluorine and Palladium Doping, Electrical, Optical | en_US |
dc.title | Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis | en_US |
dc.type | Article | en_US |