Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

Abstract

F-co-doped Palladium Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 4500 C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H2O), Palladium Chloride (PdCl2) and Ammonium Fluoride (NH4F). A resistivity of 0.3-6.9×10-2 Ωcm was obtained in F-co-doped PTO films prepared with a Pd content of 3.68at% and F content of 0 – 23.96at% under optimized conditions. The optical properties were studied in the UV/VIS/NIR region. The optical bandgap of the films laid in the range 3.945 – 4.014 eV. Using dispersion analysis with Drude and Kim terms, optical constants were determined from spectro-photometric measurements for films on glass.