Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis
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Date
2013Author
Odari, Benjamin V
Musembi, Robinson J
Mageto, Maxwell J
Othieno, Herick
Gaitho, Francis
Mwamburi, Mghendi
Valentine, Muramba
Type
ArticleLanguage
enMetadata
Show full item recordAbstract
F-co-doped Palladium Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 4500
C
using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H2O), Palladium Chloride (PdCl2) and
Ammonium Fluoride (NH4F). A resistivity of 0.3-6.9×10-2
Ωcm was obtained in F-co-doped PTO films prepared with a Pd
content of 3.68at% and F content of 0 – 23.96at% under optimized conditions. The optical properties were studied in the
UV/VIS/NIR region. The optical bandgap of the films laid in the range 3.945 – 4.014 eV. Using dispersion analysis with
Drude and Kim terms, optical constants were determined from spectro-photometric measurements for films on glass.
URI
http://article.sapub.org/10.5923.j.materials.20130304.05.htmlhttp://erepository.uonbi.ac.ke/handle/11295/155231
Publisher
University of Nairobi
Rights
Attribution-NonCommercial-NoDerivs 3.0 United StatesUsage Rights
http://creativecommons.org/licenses/by-nc-nd/3.0/us/Collections
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