dc.contributor.author | Obila, Jorim Okoth | |
dc.contributor.author | Lei, Hongwei | |
dc.contributor.author | Ayieta, Elijah Omollo | |
dc.contributor.author | Ogacho, Alex Awuor | |
dc.contributor.author | Aduda, Bernard O | |
dc.contributor.author | Wang, Feng | |
dc.date.accessioned | 2021-08-24T06:47:29Z | |
dc.date.available | 2021-08-24T06:47:29Z | |
dc.date.issued | 2021 | |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S0167577X21007965 | |
dc.identifier.uri | http://erepository.uonbi.ac.ke/handle/11295/155317 | |
dc.description.abstract | Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices. | en_US |
dc.language.iso | en | en_US |
dc.publisher | University of Nairobi | en_US |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 United States | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/3.0/us/ | * |
dc.subject | SemiconductorsSolar energy materialsSn-perovskiteAnilinium hypophosphite | en_US |
dc.title | Optoelectronic property refinement of FASnI3 films for photovoltaic application | en_US |
dc.type | Article | en_US |