Optoelectronic property refinement of FASnI3 films for photovoltaic application
Date
2021Author
Obila, Jorim Okoth
Lei, Hongwei
Ayieta, Elijah Omollo
Ogacho, Alex Awuor
Aduda, Bernard O
Wang, Feng
Type
ArticleLanguage
enMetadata
Show full item recordAbstract
Tin (Sn) is a promising substitute for lead (Pb) in organic–inorganic hybrid halide perovskite-photovoltaic devices, but it is prone to delivering low power conversion efficiencies (PCEs) due to the poor quality of Sn-perovskite films. In this work, anilinium hypophosphite (AHP) co-additive is used to fabricate high-quality FASnI3 (FA+: formamidinium) perovskite films with suppressed phase-segregation and prolonged charge carrier lifetime. Perovskite films containing 0.05 M AHP are used to fabricate solar cells and deliver improved power conversion efficiency (PCE) of up to 5.48% (control devices: 4.04%). AHP eliminates the phase separation caused by SnF2 in the absorber, leading to films with enhanced optoelectronic properties, hence the high performance of AHP-based devices.
URI
https://www.sciencedirect.com/science/article/abs/pii/S0167577X21007965http://erepository.uonbi.ac.ke/handle/11295/155317
Publisher
University of Nairobi
Rights
Attribution-NonCommercial-NoDerivs 3.0 United StatesUsage Rights
http://creativecommons.org/licenses/by-nc-nd/3.0/us/Collections
The following license files are associated with this item: