Effect of Ga Incorporation and Film Thickness on the Optical Properties of as-Deposited Amorphous GaxSel-x Thin Films
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Date
2014Author
Mulama, Austine A
Mwabora, Julius M
Oduor, Andrew O
Muiva, Cosmas M
Walloga, Chrispinus M
Language
enMetadata
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Abstract: Flash evaporated amorphous Ga.Se i., (x = 0, I, 2, 3, and 4 atomic %) on glass substrates have bee.
investigated within a 500nm-I500nm spectral range. Film thicknesses explored were; 200±IOnm, 265±IOnflJ.
330±IOnm, and 400±IOnm. The effect of film thickness and gallium content on the as-deposited thin films has
been established. As the gallium content increases, both the optical transmittance and band gap energy
decrease. Increase infilm thickness led to a decrease in optical transmittance and an increase in the band gap
energy. The other optical parameters like the absorption coefficient, extinction coefficient, refractive index, red!
pari and imaginary pari of dieleclric constant increase with increase in gallium content and film thickness.