Effect of Ga Incorporation and Film Thickness on the Optical Properties of as-Deposited Amorphous GaxSel-x Thin Films
| dc.contributor.author | Mulama, Austine A | |
| dc.contributor.author | Mwabora, Julius M | |
| dc.contributor.author | Oduor, Andrew O | |
| dc.contributor.author | Muiva, Cosmas M | |
| dc.contributor.author | Walloga, Chrispinus M | |
| dc.date.accessioned | 2015-06-20T06:47:11Z | |
| dc.date.available | 2015-06-20T06:47:11Z | |
| dc.date.issued | 2014 | |
| dc.identifier.citation | JOSR Journal of Applied Physics (JOSR-JAP) e-JSSN 2278-4861. Volume 6, Issue 5 Ver. J (Sep=Oct. 20J4), PP 01-06 11'11'w. iosrjournals. org | en_US |
| dc.identifier.uri | ww'w.iosrjournals. org | |
| dc.identifier.uri | http://hdl.handle.net/11295/85255 | |
| dc.description.abstract | Abstract: Flash evaporated amorphous Ga.Se i., (x = 0, I, 2, 3, and 4 atomic %) on glass substrates have bee. investigated within a 500nm-I500nm spectral range. Film thicknesses explored were; 200±IOnm, 265±IOnflJ. 330±IOnm, and 400±IOnm. The effect of film thickness and gallium content on the as-deposited thin films has been established. As the gallium content increases, both the optical transmittance and band gap energy decrease. Increase infilm thickness led to a decrease in optical transmittance and an increase in the band gap energy. The other optical parameters like the absorption coefficient, extinction coefficient, refractive index, red! pari and imaginary pari of dieleclric constant increase with increase in gallium content and film thickness. | en_US |
| dc.language.iso | en | en_US |
| dc.subject | Amorphous thin film, | en_US |
| dc.subject | Film thickness, | en_US |
| dc.subject | Optical property | en_US |
| dc.title | Effect of Ga Incorporation and Film Thickness on the Optical Properties of as-Deposited Amorphous GaxSel-x Thin Films | en_US |
| dc.type | Article | en_US |
| dc.type.material | en | en_US |
